Future iPhones and iPads may sport a lot more on-board memory. Samsung is now mass producing the industry’s first 256GB embedded memory based on the Universal Flash Storage (UFS) 2.0 standard, for next-generation high-end mobile devices.
“By providing high-density UFS memory that is nearly twice as fast as a SATA SSD for PCs, we will contribute to a paradigm shift within the mobile data storage market,” said Joo Sun Choi, executive vice president, Memory Sales and Marketing, Samsung Electronics, in a press release.
He says the new Samsung UFS memory is based on the company’s most advanced V-NAND flash memory chips and a specially-designed high-performance controller. The UFS memory handles up to 45,000 and 40,000 input/output operations per second (IOPS) for random reading and writing respectively; that’s over two times faster than the 19,000 and 14,000 IOPS of the previous generation of UFS memory.
For sequential reading, the 256GB UFS takes advantage of two lanes of data transfer to move data at up to 850MB/s, which is nearly twice as fast as a typical SATA-based SSD used in PCs. In terms of sequential writing, it supports up to 260MB/s, which is approximately three times faster than high-performance external micro SD cards.
As a result, Choi says the new 256GB UFS memory is capable of supporting “seamless” Ultra HD video playback and multitasking functionality on large-screen mobile devices, such as watching 4K Ultra HD movies on a split screen, while searching image files or downloading video clips.